METHOD OF FORMING INSULATING FILM, AND INSULATING FILM

PROBLEM TO BE SOLVED: To obtain an insulating film which has high mechanical strength, high stability in air atmosphere, high thermal stability, and a low relative dielectric constant. SOLUTION: When the insulating film is formed by a plasma CVD method by using an insulating film material for plasma...

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Bibliographische Detailangaben
Hauptverfasser:	INOUE MINORU, JINRIKI MANABU, JO EIKA, MACHIDA HIDEAKI, INAISHI YOSHIAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To obtain an insulating film which has high mechanical strength, high stability in air atmosphere, high thermal stability, and a low relative dielectric constant. SOLUTION: When the insulating film is formed by a plasma CVD method by using an insulating film material for plasma CVD made of a silicon compound, such as, dicyclopentyl dimethoxysilane and dicyclohexyl dimethoxysilane, an oxidant, such as oxygen is accompanied; a filming temperature is set to 200 to 300°C; and the insulating film is irradiated with ultraviolet rays of 200 nm or longer. COPYRIGHT: (C)2010,JPO&INPIT