SILICON SINGLE CRYSTAL AND PRODUCTION METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a silicon single crystal which can effectively suppress the propagation of slip dislocations when the slip dislocations occur in the last half of a process for forming a straight body part or during a process for forming a tail part of a silicon single crystal; and to provide a production method of the same. SOLUTION: In the last half of a process for forming a straight body part or during a process for forming a tail part of a silicon single crystal 5, boron is added into a silicon melt 3 so that the concentration of boron in the silicon single crystal 5 becomes not lower than 1.0×1019atoms/cm3. Thereby, the propagation of slip dislocations can be effectively suppressed without substantially causing an adverse effect on the straight body part of the single crystal being a product part. It is preferable that the addition amount of boron into the silicon melt 3 is adjusted within a range of 0.009-0.1 mass% in order to make the concentration of boron the concentration. Further, the boron concentration in the silicon single crystal 5 before addition of boron is set to 5.4×1018atoms/cm3or lower so as to avoid the effect by lowering of resistivity of the silicon single crystal accompanied by the increase of boron concentration. COPYRIGHT: (C)2010,JPO&INPIT