BONDED WAFER MANUFACTURING METHOD

BONDED WAFER MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a bonded wafer manufacturing method which can inexpensively manufacture a bonded wafer having an active layer with superior film thickness uniformity. SOLUTION: In a process of implanting oxygen ions into an active layer wafer and a subsequent heat treatment process,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ENDO AKIHIKO, NISHIHATA HIDEKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator ENDO AKIHIKO
NISHIHATA HIDEKI
description PROBLEM TO BE SOLVED: To provide a bonded wafer manufacturing method which can inexpensively manufacture a bonded wafer having an active layer with superior film thickness uniformity. SOLUTION: In a process of implanting oxygen ions into an active layer wafer and a subsequent heat treatment process, the volume fraction of SiO2particles dispersed in silicon in a formed oxygen-ion-implanted layer is set to be no smaller than 30% and no larger than 80%. In a process of reducing the thickness of the active layer wafer part, using the oxygen-ion-implanted layer formed in the foregoing process of implanting oxygen ions into an active layer wafer as an abrasion stop layer, at least abrasion is performed on the active layer wafer part. COPYRIGHT: (C)2010,JPO&INPIT
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2009272471A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2009272471A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2009272471A3</originalsourceid><addsrcrecordid>eNrjZFB08vdzcXVRCHd0cw1S8HX0C3VzdA4JDfL0c1fwdQ3x8HfhYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBgaWRuZGJuaGjsZEKQIAU_Eilg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>BONDED WAFER MANUFACTURING METHOD</title><source>esp@cenet</source><creator>ENDO AKIHIKO ; NISHIHATA HIDEKI</creator><creatorcontrib>ENDO AKIHIKO ; NISHIHATA HIDEKI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a bonded wafer manufacturing method which can inexpensively manufacture a bonded wafer having an active layer with superior film thickness uniformity. SOLUTION: In a process of implanting oxygen ions into an active layer wafer and a subsequent heat treatment process, the volume fraction of SiO2particles dispersed in silicon in a formed oxygen-ion-implanted layer is set to be no smaller than 30% and no larger than 80%. In a process of reducing the thickness of the active layer wafer part, using the oxygen-ion-implanted layer formed in the foregoing process of implanting oxygen ions into an active layer wafer as an abrasion stop layer, at least abrasion is performed on the active layer wafer part. COPYRIGHT: (C)2010,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20091119&amp;DB=EPODOC&amp;CC=JP&amp;NR=2009272471A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20091119&amp;DB=EPODOC&amp;CC=JP&amp;NR=2009272471A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ENDO AKIHIKO</creatorcontrib><creatorcontrib>NISHIHATA HIDEKI</creatorcontrib><title>BONDED WAFER MANUFACTURING METHOD</title><description>PROBLEM TO BE SOLVED: To provide a bonded wafer manufacturing method which can inexpensively manufacture a bonded wafer having an active layer with superior film thickness uniformity. SOLUTION: In a process of implanting oxygen ions into an active layer wafer and a subsequent heat treatment process, the volume fraction of SiO2particles dispersed in silicon in a formed oxygen-ion-implanted layer is set to be no smaller than 30% and no larger than 80%. In a process of reducing the thickness of the active layer wafer part, using the oxygen-ion-implanted layer formed in the foregoing process of implanting oxygen ions into an active layer wafer as an abrasion stop layer, at least abrasion is performed on the active layer wafer part. COPYRIGHT: (C)2010,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFB08vdzcXVRCHd0cw1S8HX0C3VzdA4JDfL0c1fwdQ3x8HfhYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBgaWRuZGJuaGjsZEKQIAU_Eilg</recordid><startdate>20091119</startdate><enddate>20091119</enddate><creator>ENDO AKIHIKO</creator><creator>NISHIHATA HIDEKI</creator><scope>EVB</scope></search><sort><creationdate>20091119</creationdate><title>BONDED WAFER MANUFACTURING METHOD</title><author>ENDO AKIHIKO ; NISHIHATA HIDEKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2009272471A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ENDO AKIHIKO</creatorcontrib><creatorcontrib>NISHIHATA HIDEKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ENDO AKIHIKO</au><au>NISHIHATA HIDEKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>BONDED WAFER MANUFACTURING METHOD</title><date>2009-11-19</date><risdate>2009</risdate><abstract>PROBLEM TO BE SOLVED: To provide a bonded wafer manufacturing method which can inexpensively manufacture a bonded wafer having an active layer with superior film thickness uniformity. SOLUTION: In a process of implanting oxygen ions into an active layer wafer and a subsequent heat treatment process, the volume fraction of SiO2particles dispersed in silicon in a formed oxygen-ion-implanted layer is set to be no smaller than 30% and no larger than 80%. In a process of reducing the thickness of the active layer wafer part, using the oxygen-ion-implanted layer formed in the foregoing process of implanting oxygen ions into an active layer wafer as an abrasion stop layer, at least abrasion is performed on the active layer wafer part. COPYRIGHT: (C)2010,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2009272471A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title BONDED WAFER MANUFACTURING METHOD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T05%3A02%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ENDO%20AKIHIKO&rft.date=2009-11-19&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2009272471A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true