BONDED WAFER MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a bonded wafer manufacturing method which can inexpensively manufacture a bonded wafer having an active layer with superior film thickness uniformity. SOLUTION: In a process of implanting oxygen ions into an active layer wafer and a subsequent heat treatment process,...

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Bibliographische Detailangaben
Hauptverfasser:	ENDO AKIHIKO, NISHIHATA HIDEKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a bonded wafer manufacturing method which can inexpensively manufacture a bonded wafer having an active layer with superior film thickness uniformity. SOLUTION: In a process of implanting oxygen ions into an active layer wafer and a subsequent heat treatment process, the volume fraction of SiO2particles dispersed in silicon in a formed oxygen-ion-implanted layer is set to be no smaller than 30% and no larger than 80%. In a process of reducing the thickness of the active layer wafer part, using the oxygen-ion-implanted layer formed in the foregoing process of implanting oxygen ions into an active layer wafer as an abrasion stop layer, at least abrasion is performed on the active layer wafer part. COPYRIGHT: (C)2010,JPO&INPIT