METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To control the effective work function of an MIS transistor comprising a metal gate electrode using a TaCxfilm on an Hf-O-based insulating film. SOLUTION: A gate insulating film 2 is formed from a silicon layer 1c side of an SOI substrate 1. Then, TaCxfilm is deposited by a room temperature sputtering method on the gate insulating film 2. A metal gate electrode 3 constituted by forming the TaCxfilm thereon. Then, a silicon film in an amorphous state is formed on the metal gate electrode 3, and then the metal gate electrode 3 is subjected to heat treatment. Then, the silicon film is removed, and then oxygen is added to the metal gate electrode 3. COPYRIGHT: (C)2010,JPO&INPIT