SEMICONDUCTOR DEVICE, AND BONDING MATERIAL

PROBLEM TO BE SOLVED: To provide a means which enhances the bonding reliability of a bonding portion between an Al electrode of a semiconductor device and a bonding material having metal particles as a main bonding agent. SOLUTION: In the semiconductor device, the Al electrode of the semiconductor element is connected with a bonding layer made of Ag or Cu interposed, and the bonding layer and the Al electrode are bonded to each other with an amorphous layer interposed therebetween. It is possible to obtain excellent bonding strength to the Al electrode by performing a bonding process in atmospheric air by using a bonding material including metal oxide particles with an average diameter of 1 nm to 50 μm, an acetic acid- or a formic acid-based compound, and a reducing agent made of an organic material. COPYRIGHT: (C)2010,JPO&INPIT