CHARGE TRAP TYPE NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a charge trap type nonvolatile semiconductor memory device that reduces interference between adjacent memory cells and has favorable characteristics and a method for manufacturing the same. SOLUTION: A charge trap type nonvolatile semiconductor memory device includes a plurality of memory cells formed to be separated for a predetermined interval by an element isolation insulating film 15 along a word line direction. Each memory cell is configured to include: part of a silicon substrate, a tunnel insulation film 12a formed on the part of the silicon substrate, a charge film 13a formed on the tunnel insulation film 12a, a common block film 14 formed on the charge film 13a, and a control electrode film 16 formed on the common block film 14. The element isolation insulating film 15 is embedded between a pair of the adjacent memory cells until the upper portion of the sidewall of the element isolation insulating film comes in contact with the sidewall of the charge film 13a in the memory cell. COPYRIGHT: (C)2010,JPO&INPIT