SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device which has a high reliability of an electrical connection with a Cu plug and little leakage current in a configuration of electrically connecting between wirings by the Cu plug, and a method of manufacturing the semiconductor device. SOLUTION: A semiconductor device 100 includes: a semiconductor substrate 1 which forms a diffusion layer 43 and a gate electrode 42; an interlayer insulating film 5 which is formed on the semiconductor substrate 1; a contact hole 61 which penetrates the interlayer insulating film 5 and is formed on the diffusion layer 43 and the gate electrode 42; a Ti barrier metal layer 62 which is formed in an inner surface of the contact hole 61; a seed layer 63 which contains any one of W, Co, Ru, Pt formed on the Ti barrier metal layer 62; a Cu plug 64 which is arranged on the seed layer 63 and is formed so as to fill up the contact hole 61; and a wiring layer 7 formed on the Cu plug 64. COPYRIGHT: (C)2010,JPO&INPIT