MANUFACTURING DEVICE OF GROUP III NITRIDE CRYSTAL AND MANUFACTURING METHOD USING THE SAME

PROBLEM TO BE SOLVED: To provide a crystal growing device capable of optimizing a growth condition by understanding a growth state of a crystal in an actual time in the manufacture of a GaN single crystal. SOLUTION: In the manufacturing device of a group III nitride crystal wherein the nitrogen supplied from a nitrogen source 13 provided with a valve for varying a supply amount is run into a pressure vessel 1 incorporating a crystal growth vessel 2 by a flow line 3a, the manufacturing device of the group III nitride crystal is provided with a first flowmeter 6a provided at the flow line 3a of an inflow side by which the nitrogen flows into the pressure vessel 1 and detecting a flow volume of the nitrogen, a second flowmeter 6b provided at a flow line 3b of the outflow side by which the nitrogen flows out from the pressure vessel 1 and detecting and varying the flow volume and a pressure controlling means for operating valves of the nitrogen source 13 and the second flowmeter 6b so that a flow rate difference between the first flowmeter 6a and the second flowmeter 6b coincides with a predetermined value. COPYRIGHT: (C)2010,JPO&INPIT