SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing parasitic capacity without significantly affecting a breakdown voltage nor ON-time resistance. SOLUTION: The semiconductor device includes: a first layer of a first conductivity type; a second layer of a second conductivity...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	KOMACHI TOMONORI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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