SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing parasitic capacity without significantly affecting a breakdown voltage nor ON-time resistance. SOLUTION: The semiconductor device includes: a first layer of a first conductivity type; a second layer of a second conductivity type different from the first conductivity type; a third layer of the first conductivity type formed on a side wall surface of a groove portion provided in the second layer to reach the first layer; a fourth layer of the second conductivity type formed in one region contacting a surface in the second layer; a fifth layer of the first conductivity type formed in one region contacting a surface in the fourth layer; a gate electrode formed on the surface of the second layer and covered with an insulating film; a source electrode formed covering a portion of the fifth layer; a sixth layer of the first conductivity type forme don the other surface of the first layer; and a drain electrode formed on a surface of the sixth layer. COPYRIGHT: (C)2010,JPO&INPIT