RECTIFIER ELEMENT

PROBLEM TO BE SOLVED: To provide a manufacturing method for improving an integration degree of a semiconductor rectifier element and reducing loss by reducing voltage drop in the forward direction. SOLUTION: An n type single-crystal silicon layer 12 is formed, and a groove 13 is provided on a first principal plane of a high concentration n type single-crystal silicon substrate 11. A titanium layer 14 is formed in the groove 13, a groove 15 is provided in a partial region of the bottom of the groove 13, and an insulating film 16 is formed in the groove 15. A p type polysilicon embedded layer 17 is formed in the insulating film. A high concentration n type single-crystal silicon layer 18 from the first principal plane of the semiconductor layer 12 to the semiconductor substrate 11 is formed. A groove 19 is provided in the semiconductor layer 12 between the groove 13 and the high concentration semiconductor layer 18, and an insulating film 20 is formed in the groove 19. A p type polysilicon embedded layer 21 is formed in the insulating film 20. An insulating film 22 is formed on the first principal plane of the semiconductor layer 12, and the metal layer 14 is connected to the embedded conductor layer 21. COPYRIGHT: (C)2010,JPO&INPIT