SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, SOLID-STATE IMAGING ELEMENT, METHOD OF MANUFACTURING SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC INFORMATION EQUIPMENT

PROBLEM TO BE SOLVED: To reduce a leakage current in a silicon substrate by forming holes by a thin nitride film having an oxide film surface nitrided without difficulty in processing nor deterioration in light collection efficiency as compared with conventional constitution and capturing interstitial Si atoms generated by ion injection into the holes. SOLUTION: In a semiconductor substrate 1, a plurality of photodetection parts 3 are arranged which photoelectrically convert image light from a subject to generate signal charges, thermal oxide films 6 are provided on the plurality of the photodetection parts 3, and nitride film 7 is formed by further nitriding surfaces of the thermal oxide films 6 with heat. The nitride film 7 is formed only above the photodetection parts 3 and the thickness thereof is 0.1 to 5 nm. COPYRIGHT: (C)2010,JPO&INPIT