METHOD AND APPARATUS OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE

PROBLEM TO BE SOLVED: To provide a method and an apparatus of manufacturing a semiconductor light emitting device which reduce the variance of irradiation of a laser light and entirely and uniformly form an isolation layer for isolating a growth substrate by reducing the warpage of a large-area wafer (growth substrate and supporting substrate), as a part of a process of removing the growth substrate for the large-area wafer. SOLUTION: The method of manufacturing a semiconductor light-emitting device and the apparatus therefor includes: a first step to form a semiconductor laminate by stacking semiconductor layers containing light emitting layers on the surface of a growth substrate; a second step to allow the semiconductor laminate side of the growth substrate and the bonding surface side of the supporting substrate to be located opposite to each other and to form a bonding layer for bonding the growth substrate and the supporting substrate therebetween; and a third step to heat at least the growth substrate and the supporting substrate and give a laser light from the rear surface of the growth substrate at the same time. COPYRIGHT: (C)2010,JPO&INPIT