APPARATUS AND METHOD FOR GROWING CRYSTAL
PROBLEM TO BE SOLVED: To provide an apparatus for growing a crystal capable of preventing gases present outside a chamber such as oxygen adhered on the surface of a substrate from being brought into a chamber by a simple system when a substrate is conveyed to a chamber. SOLUTION: Between a chamber 2...
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| creator | YASUTAKE KENJI |
| description | PROBLEM TO BE SOLVED: To provide an apparatus for growing a crystal capable of preventing gases present outside a chamber such as oxygen adhered on the surface of a substrate from being brought into a chamber by a simple system when a substrate is conveyed to a chamber. SOLUTION: Between a chamber 2 which becomes a space for growing a crystal on the surface of a substrate 9 and a lifter room 3 where the substrate 9 is conveyed towards the chamber 2, a conveying path forming part 4 which becomes a path for conveying the substrate 9 from the lifter room 3 to the chamber 2 is formed. In the conveying path forming part 4, a guiding tube 5 which is cylindrical, extends parallel to a conveying direction to which the substrate 9 is conveyed and through which the substrate 9 can pass is formed. An inert gas which is supplied from a gas supplying means 6 and fills up in the chamber 2 flows along in contact with the surface of the substrate 9 conveyed in passing through the guiding tube 5. COPYRIGHT: (C)2010,JPO&INPIT |
| format | Patent |
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SOLUTION: Between a chamber 2 which becomes a space for growing a crystal on the surface of a substrate 9 and a lifter room 3 where the substrate 9 is conveyed towards the chamber 2, a conveying path forming part 4 which becomes a path for conveying the substrate 9 from the lifter room 3 to the chamber 2 is formed. In the conveying path forming part 4, a guiding tube 5 which is cylindrical, extends parallel to a conveying direction to which the substrate 9 is conveyed and through which the substrate 9 can pass is formed. An inert gas which is supplied from a gas supplying means 6 and fills up in the chamber 2 flows along in contact with the surface of the substrate 9 conveyed in passing through the guiding tube 5. 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| language | eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | APPARATUS AND METHOD FOR GROWING CRYSTAL |
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