THIN FILM TRANSISTOR SUBSTRATE

PROBLEM TO BE SOLVED: To solve the problem that a resist coating film thickness depends upon a foundation pattern and when a resist film is processed by multi-tone exposure like gray-tone exposure to manage a resist remaining film thickness after development to a uniform thickness, a resist coating...

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Bibliographische Detailangaben
Hauptverfasser: MASUTANI YUICHI, ITO YASUETSU, AOKI OSAMU
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To solve the problem that a resist coating film thickness depends upon a foundation pattern and when a resist film is processed by multi-tone exposure like gray-tone exposure to manage a resist remaining film thickness after development to a uniform thickness, a resist coating film thickness of an upper layer needs to be uniform even if the foundation pattern is different. SOLUTION: In forming a thin film transistor using multi-tone exposure, a wiring width of a foundational wiring 2a is 40 mum or less, and a ratio R of a wiring width W of a foundational wiring in a dense case to a space S between adjacent wirings is 1.7, preferably 1.0 or less. COPYRIGHT: (C)2010,JPO&INPIT