METHOD FOR PULLING UP SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a method for pulling up a single crystal by the Czochralski method capable of reducing the dislocation generation of a single crystal resulting from a neck by making a neck part shape capable of reproducibly attaining the optimum values of the neck part length and the average range of fluctuation at this neck part. SOLUTION: The method includes a step S2 of contacting a seed crystal with the surface of silicon melt in a crucible and ascertaining the optimum melt surface temperature for growth start of a shrunk diameter part of the neck by the width of protruded crystal habit striae of meniscus, a step S3 of growing where a throttling part to reduce the diameter to form a nearly reverse conical shape by correcting the deviation of a diameter set value which is based on a substantially reverse conical shape from contact to the silicon melt of the seed crystal to a necking start size by growing the velocity and electricity supplied to a heater for heating the silicon melt, and a step S4 of modifying the deviation of the diameter set value within the range of 200-400 mm of the neck length by growing velocity and electricity supplied to the heater for heating the silicon melt. COPYRIGHT: (C)2010,JPO&INPIT