MANUFACTURING METHOD OF SEMICONDUCTOR MODULE AND NON-DEFECTIVE PRODUCT DETERMINING DEVICE

PROBLEM TO BE SOLVED: To obtain a manufacturing method of a semiconductor module capable of improving crack detection sensitivity for an insulating substrate though it is a simple method applicable to mass-produced articles and preventing the creeping destruction of the insulating substrate, and to...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HASEGAWA TAKETOSHI, NISHIBORI HIROSHI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To obtain a manufacturing method of a semiconductor module capable of improving crack detection sensitivity for an insulating substrate though it is a simple method applicable to mass-produced articles and preventing the creeping destruction of the insulating substrate, and to obtain a non-defective product determining device. SOLUTION: The semiconductor module 1 is heated by a hot plate 4 and a negative polarity DC voltage is applied by a high voltage power source 2. A temperature during heating is set higher than a room temperature, and set to 125°C or higher more suitably. Since a crack 20 existing inside the insulating substrate 12 is detected by a voltage lower than a conventionally used AC voltage, creeping destruction that may occur to the insulating substrate 12 is prevented. Furthermore, by setting the heating temperature to room temperature or higher, the applying voltage is further lowered. COPYRIGHT: (C)2010,JPO&INPIT