SILICON WAFER HAVING GETTERING CAPABILITY, AND DEVICE MANUFACTURING METHOD

SILICON WAFER HAVING GETTERING CAPABILITY, AND DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a means for achieving a gettering capability which provides a gettering region even in a thin silicon wafer or a silicon on insulator (SOI) wafer, preventing deterioration of flatness or particle contamination harmful to a device. SOLUTION: The silicon wafer has the...

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1. Verfasser: MIYAZAKI MORIMASA
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator MIYAZAKI MORIMASA
description PROBLEM TO BE SOLVED: To provide a means for achieving a gettering capability which provides a gettering region even in a thin silicon wafer or a silicon on insulator (SOI) wafer, preventing deterioration of flatness or particle contamination harmful to a device. SOLUTION: The silicon wafer has the gettering capability to provide the gettering region having a groove in a portion other than a region designated for a device active region on a surface of the silicon wafer having the designated region. A device manufacturing method includes a step of forming a groove in a portion other than the device active region on the surface of the silicon wafer having the region designated for the device active region. COPYRIGHT: (C)2010,JPO&INPIT
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SILICON WAFER HAVING GETTERING CAPABILITY, AND DEVICE MANUFACTURING METHOD
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