SILICON WAFER HAVING GETTERING CAPABILITY, AND DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a means for achieving a gettering capability which provides a gettering region even in a thin silicon wafer or a silicon on insulator (SOI) wafer, preventing deterioration of flatness or particle contamination harmful to a device. SOLUTION: The silicon wafer has the gettering capability to provide the gettering region having a groove in a portion other than a region designated for a device active region on a surface of the silicon wafer having the designated region. A device manufacturing method includes a step of forming a groove in a portion other than the device active region on the surface of the silicon wafer having the region designated for the device active region. COPYRIGHT: (C)2010,JPO&INPIT