PRODUCTION METHOD OF THIN FILM TRANSISTOR DISPLAY PANEL

PROBLEM TO BE SOLVED: To prevent flicker in screen by ensuring uniformity of parasitic capacitance between a gate electrode and a drain electrode. SOLUTION: A production method of thin film transistor display panel comprises: a step of forming a gate line with the gate electrode on a substrate; a st...

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Bibliographische Detailangaben
Hauptverfasser:	DEN SHOEKI, LEE SEIEI, CHOI KWON-YOUNG, ZEN SAIKO
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FREQUENCY-CHANGING HOLOGRAPHY LABELS OR NAME-PLATES MATERIALS THEREFOR NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent flicker in screen by ensuring uniformity of parasitic capacitance between a gate electrode and a drain electrode. SOLUTION: A production method of thin film transistor display panel comprises: a step of forming a gate line with the gate electrode on a substrate; a step of laminating a gate insulating film on the substrate; a step of forming a semiconductor layer on the gate insulating film; a step of forming a data line with a source electrode in contact with the semiconductor layer, and a drain electrode which overlaps with the gate electrode; a step of forming a protection film covering the semiconductor layer; and a step of forming a pixel electrode connected to the drain electrode. The semiconductor layer, the data line, and the drain electrode or the pixel electrode are formed by patterning by using a photosensitive film pattern obtained by exposing and developing a photosensitive as an etching mask film in an exposure process in a photo-etching process. A boundary line between the gate electrode and the drain electrode overlapped each other is disposed perpendicular to a scanning direction for exposing the photosensitive film in the exposure process. COPYRIGHT: (C)2009,JPO&INPIT