CHEMICAL-MECHANICAL POLISHING PAD, AND CHEMICAL-MECHANICAL POLISHING METHOD

CHEMICAL-MECHANICAL POLISHING PAD, AND CHEMICAL-MECHANICAL POLISHING METHOD

PROBLEM TO BE SOLVED: To provide: a chemical-mechanical polishing pad capable of preventing damage of a polishing layer during chemical-mechanical polishing; and a chemical-mechanical polishing method capable of carrying out high-quality chemical-mechanical polishing over a long time by using the ch...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TSUJI AKIMORI, TANO HIROYUKI, TONSHO SHINJI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide: a chemical-mechanical polishing pad capable of preventing damage of a polishing layer during chemical-mechanical polishing; and a chemical-mechanical polishing method capable of carrying out high-quality chemical-mechanical polishing over a long time by using the chemical-mechanical polishing pad. SOLUTION: This chemical-mechanical polishing pad 10 used for chemical-mechanical polishing includes a polishing layer 11 having a polishing surface 20, a non-polishing surface 22 located on the side opposite to the polishing surface, and a recessed part 24 formed in a region including a center part of the non-polishing surface. The recessed part is provided with a plurality of bottom parts 25 and 26 having depths different from one another. COPYRIGHT: (C)2009,JPO&INPIT