MANUFACTURING METHOD OF DIELECTRIC ELEMENT
PROBLEM TO BE SOLVED: To provide a method capable of etching a dielectric film at an appropriate etching rate and in good contrast while preventing damage of a base metal film and adhesion of an undesired substance to a surface of the base metal surface, in manufacture of a dielectric element having...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | TOKITA KOJI KOMURO EIKI OIKAWA YASUNOBU |
description | PROBLEM TO BE SOLVED: To provide a method capable of etching a dielectric film at an appropriate etching rate and in good contrast while preventing damage of a base metal film and adhesion of an undesired substance to a surface of the base metal surface, in manufacture of a dielectric element having a base metal film and a dielectric film formed on the base metal film. SOLUTION: This manufacturing method of the dielectric element includes a process of removing a part of the dielectric film 3 by bringing the dielectric film 3 formed on the base metal film 1 and containing an oxide having Ti and Ba into contact with an etchant. The etchant is an aqueous solution containing 0.01-3.0 mol/L of at least one of fluorine compounds within ammonium fluoride and hydrogen fluoride, and 0.1-5.0 mol/L of at least one acid selected from a group comprising hydrochloric acid, nitric acid, phosphoric acid and acetic acid. COPYRIGHT: (C)2009,JPO&INPIT |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2009218426A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2009218426A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2009218426A3</originalsourceid><addsrcrecordid>eNrjZNDydfQLdXN0DgkN8vRzV_B1DfHwd1Hwd1Nw8XT1cXUOCfJ0VgAyfF39QngYWNMSc4pTeaE0N4OSm2uIs4duakF-fGpxQWJyal5qSbxXgJGBgaWRoYWJkZmjMVGKAJlgJRU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MANUFACTURING METHOD OF DIELECTRIC ELEMENT</title><source>esp@cenet</source><creator>TOKITA KOJI ; KOMURO EIKI ; OIKAWA YASUNOBU</creator><creatorcontrib>TOKITA KOJI ; KOMURO EIKI ; OIKAWA YASUNOBU</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a method capable of etching a dielectric film at an appropriate etching rate and in good contrast while preventing damage of a base metal film and adhesion of an undesired substance to a surface of the base metal surface, in manufacture of a dielectric element having a base metal film and a dielectric film formed on the base metal film. SOLUTION: This manufacturing method of the dielectric element includes a process of removing a part of the dielectric film 3 by bringing the dielectric film 3 formed on the base metal film 1 and containing an oxide having Ti and Ba into contact with an etchant. The etchant is an aqueous solution containing 0.01-3.0 mol/L of at least one of fluorine compounds within ammonium fluoride and hydrogen fluoride, and 0.1-5.0 mol/L of at least one acid selected from a group comprising hydrochloric acid, nitric acid, phosphoric acid and acetic acid. COPYRIGHT: (C)2009,JPO&INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CAPACITORS ; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ; ELECTRICITY</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090924&DB=EPODOC&CC=JP&NR=2009218426A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090924&DB=EPODOC&CC=JP&NR=2009218426A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TOKITA KOJI</creatorcontrib><creatorcontrib>KOMURO EIKI</creatorcontrib><creatorcontrib>OIKAWA YASUNOBU</creatorcontrib><title>MANUFACTURING METHOD OF DIELECTRIC ELEMENT</title><description>PROBLEM TO BE SOLVED: To provide a method capable of etching a dielectric film at an appropriate etching rate and in good contrast while preventing damage of a base metal film and adhesion of an undesired substance to a surface of the base metal surface, in manufacture of a dielectric element having a base metal film and a dielectric film formed on the base metal film. SOLUTION: This manufacturing method of the dielectric element includes a process of removing a part of the dielectric film 3 by bringing the dielectric film 3 formed on the base metal film 1 and containing an oxide having Ti and Ba into contact with an etchant. The etchant is an aqueous solution containing 0.01-3.0 mol/L of at least one of fluorine compounds within ammonium fluoride and hydrogen fluoride, and 0.1-5.0 mol/L of at least one acid selected from a group comprising hydrochloric acid, nitric acid, phosphoric acid and acetic acid. COPYRIGHT: (C)2009,JPO&INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CAPACITORS</subject><subject>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDydfQLdXN0DgkN8vRzV_B1DfHwd1Hwd1Nw8XT1cXUOCfJ0VgAyfF39QngYWNMSc4pTeaE0N4OSm2uIs4duakF-fGpxQWJyal5qSbxXgJGBgaWRoYWJkZmjMVGKAJlgJRU</recordid><startdate>20090924</startdate><enddate>20090924</enddate><creator>TOKITA KOJI</creator><creator>KOMURO EIKI</creator><creator>OIKAWA YASUNOBU</creator><scope>EVB</scope></search><sort><creationdate>20090924</creationdate><title>MANUFACTURING METHOD OF DIELECTRIC ELEMENT</title><author>TOKITA KOJI ; KOMURO EIKI ; OIKAWA YASUNOBU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2009218426A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CAPACITORS</topic><topic>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>TOKITA KOJI</creatorcontrib><creatorcontrib>KOMURO EIKI</creatorcontrib><creatorcontrib>OIKAWA YASUNOBU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TOKITA KOJI</au><au>KOMURO EIKI</au><au>OIKAWA YASUNOBU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURING METHOD OF DIELECTRIC ELEMENT</title><date>2009-09-24</date><risdate>2009</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method capable of etching a dielectric film at an appropriate etching rate and in good contrast while preventing damage of a base metal film and adhesion of an undesired substance to a surface of the base metal surface, in manufacture of a dielectric element having a base metal film and a dielectric film formed on the base metal film. SOLUTION: This manufacturing method of the dielectric element includes a process of removing a part of the dielectric film 3 by bringing the dielectric film 3 formed on the base metal film 1 and containing an oxide having Ti and Ba into contact with an etchant. The etchant is an aqueous solution containing 0.01-3.0 mol/L of at least one of fluorine compounds within ammonium fluoride and hydrogen fluoride, and 0.1-5.0 mol/L of at least one acid selected from a group comprising hydrochloric acid, nitric acid, phosphoric acid and acetic acid. COPYRIGHT: (C)2009,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_JP2009218426A |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ELECTRICITY |
title | MANUFACTURING METHOD OF DIELECTRIC ELEMENT |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T12%3A03%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TOKITA%20KOJI&rft.date=2009-09-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2009218426A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |