MANUFACTURING METHOD OF DIELECTRIC ELEMENT

PROBLEM TO BE SOLVED: To provide a method capable of etching a dielectric film at an appropriate etching rate and in good contrast while preventing damage of a base metal film and adhesion of an undesired substance to a surface of the base metal surface, in manufacture of a dielectric element having a base metal film and a dielectric film formed on the base metal film. SOLUTION: This manufacturing method of the dielectric element includes a process of removing a part of the dielectric film 3 by bringing the dielectric film 3 formed on the base metal film 1 and containing an oxide having Ti and Ba into contact with an etchant. The etchant is an aqueous solution containing 0.01-3.0 mol/L of at least one of fluorine compounds within ammonium fluoride and hydrogen fluoride, and 0.1-5.0 mol/L of at least one acid selected from a group comprising hydrochloric acid, nitric acid, phosphoric acid and acetic acid. COPYRIGHT: (C)2009,JPO&INPIT