METHOD FOR FABRICATING INTEGRATED CIRCUIT DEVICE
PROBLEM TO BE SOLVED: To provide a method for fabricating an integrated circuit device. SOLUTION: The integrated circuit has a plurality of TFTs and an electrical interconnect structure. In the process, at least some constituents of the TFTs are formed on a first substrate 10. At least the interconn...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a method for fabricating an integrated circuit device. SOLUTION: The integrated circuit has a plurality of TFTs and an electrical interconnect structure. In the process, at least some constituents of the TFTs are formed on a first substrate 10. At least the interconnect structure is formed on a second substrate 40. The two substrates 10 and 40 are laminated together to form the integrated circuit device having fully formed TFTs. COPYRIGHT: (C)2009,JPO&INPIT |
---|