MANUFACTURING METHOD OF PROBE

PROBLEM TO BE SOLVED: To easily and stably manufacture a desired probe needle having a sharp chip with extremely high accuracy and high yield, and properly perform an electrical characteristic inspection of a transistor, for example, in 45 nm technology. SOLUTION: The surface of a W line 1 is purifi...

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Bibliographische Detailangaben
Hauptverfasser: NAGANO OSAMI, NISHIUMI TOSHIYA
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To easily and stably manufacture a desired probe needle having a sharp chip with extremely high accuracy and high yield, and properly perform an electrical characteristic inspection of a transistor, for example, in 45 nm technology. SOLUTION: The surface of a W line 1 is purified by applying direct current, for example, in the range of from 0.8-1.0 A, and preferably from 0.8-0.9 A to the W line 1 in an oxidation resistant atmosphere such as nitrogen (N2) atmosphere by current control by a current control unit 12 to remove fine impurities, such as dust, adhering to the surface of the W line 1. COPYRIGHT: (C)2009,JPO&INPIT