NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND DEPLETION TYPE MOS TRANSISTOR

PROBLEM TO BE SOLVED: To vary an intrinsic breakdown voltage and a soft breakdown voltage without varying the area of a transistor. SOLUTION: A peripheral circuit for driving a memory cell transistor in a memory cell array includes at least a first transistor. The first transistor includes a gate el...

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Bibliographische Detailangaben

Hauptverfasser:	GOMIKAWA KENJI, NOGUCHI MITSUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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