SURFACE-EMITTING SEMICONDUCTOR LASER ELEMENT

PROBLEM TO BE SOLVED: To provide a surface-emitting laser capable of stable single transverse mode oscillation in a fundamental mode. SOLUTION: A surface-emitting semiconductor laser 100 oscillating at a wavelength λ includes an ion-implanted current narrowing layer 14 near an active layer 13. An array of holes 20 arranged two-dimensionally and having a point defect in the center without a hole is formed in an upper Bragg reflector 15. The width of the current aperture of the current narrowing layer 14 is not larger than the diameter (D) of a circle drawn by connecting the center of the holes that are nearest the point defect, wherein the diameter D of the circle is 10.6λ or smaller. COPYRIGHT: (C)2009,JPO&INPIT