SPUTTERING TARGET

PROBLEM TO BE SOLVED: To provide a sputtering target capable of suppressing occurrence of a target crack. SOLUTION: The sputtering target is produced by mixing the main powder composed of In obtained by pulverizing the ingot of an intermetallic compound region with auxiliary powder of a component co...

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Bibliographische Detailangaben
Hauptverfasser: MATSUZAKI HITOSHI, FUJII HIDEO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a sputtering target capable of suppressing occurrence of a target crack. SOLUTION: The sputtering target is produced by mixing the main powder composed of In obtained by pulverizing the ingot of an intermetallic compound region with auxiliary powder of a component composition different from that of the main powder, and sintering the mixture so as to obtain the prescribed component composition. The total content of Si, Al, Fe which are inevitable impurities in the content components therein is ≤300 mass ppm. Also, the intermetallic compound includes In and one or more selected Co and Ni. COPYRIGHT: (C)2009,JPO&INPIT