SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device which can simultaneously increase a withstand voltage and resistance to the ESD of a current drive output terminal and can increase the speed of a response of a current of the current drive output terminal. SOLUTION: A high withstand voltage n-...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	KATAOKA SHINICHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor device which can simultaneously increase a withstand voltage and resistance to the ESD of a current drive output terminal and can increase the speed of a response of a current of the current drive output terminal. SOLUTION: A high withstand voltage n-channel MOS transistor 6 as a cascode transistor is arranged between an LED driving output terminal 7 and an n-channel MOS transistor 2. Also, an ESD protective circuit 14 is connected with a connection point between the high withstand voltage n-channel MOS transistor 6 and the n-channel MOS transistor 2 via a diode 11. COPYRIGHT: (C)2009,JPO&INPIT