SUBSTRATE PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of performing uniform etching to a principal plane of a substrate by preventing or suppressing a residual etchant in peripheral portions of the principal plane of the substrate. SOLUTION: In an upper part of an interior region of a peripheral portion on a wafer W, a slit discharge opening 21 of a gas knife nozzle 7 is arranged towards a spraying region E formed in the peripheral portion of a top face of the wafer W during etching. An inert gas from the gas knife nozzle 7 goes outside from the inside of the wafer W in plan view. Nitrohydrofluoric acid residing in the peripheral portion of the top face of the wafer W is discharged to the outside of the wafer W. COPYRIGHT: (C)2009,JPO&INPIT