INSULATING FILM MATERIAL, METHOD OF FORMING FILM USING THE INSULATING FILM MATERIAL, AND INSULATING FILM

PROBLEM TO BE SOLVED: To provide an insulating film which is useful as an interlayer dielectric, etc., of a semiconductor device and has a low relative dielectric constant and a high copper diffusion barrier property. SOLUTION: The insulating film is formed by plasma CVD, using insulating materials...

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Bibliographische Detailangaben
Hauptverfasser:	INOUE MINORU, JINRIKI MANABU, MIYAZAWA KAZUHIRO, HANESAKA SATOSHI, ONO TAKAHISA, TAJIMA NOBUO, SAKOTA KAORU, INAISHI YOSHIAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS BASED THEREON DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an insulating film which is useful as an interlayer dielectric, etc., of a semiconductor device and has a low relative dielectric constant and a high copper diffusion barrier property. SOLUTION: The insulating film is formed by plasma CVD, using insulating materials of a 1-1-divinyl-1-silacyclopentane, a 1-1-diallyl-1-silacyclopentane, a 1-1-diethynyl-1-silacyclobutane, a 1-1-divinyl-1-silacyclobutane, etc. The deposition process may be accompanied with a carrier gas not containing oxide, such as He, Ar, Kr, Xe, hydrogen, and hydrocarbon. COPYRIGHT: (C)2009,JPO&INPIT