METHOD FOR MANUFACTURING COPPER WIRING INSULATION FILM USING SEMI-ADDITIVE METHOD, AND COPPER WIRING INSULATION FILM MANUFACTURED FROM THE SAME

PROBLEM TO BE SOLVED: To provide a method for manufacturing a copper wiring insulation film using a semi-additive method, which suppresses the occurrence of connection failure or wiring fall when mounting chips such as IC chips using a carrier-equipped copper foil laminate insulation film, and is applicable to a fine-pitch wiring. SOLUTION: The method for manufacturing a copper wiring insulation film using a semi-additive method uses a carrier-equipped copper foil laminate insulation film in which a carrier-equipped copper foil having 0.5-5 μm thickness of a copper foil is laminated on a signal surface or both surfaces of an insulation film. The insulation film obtained by removing the undulation on the surface of the copper foil on a side laminated on the insulation film of the copper foil or the copper foil of the copper foil laminate insulation film is selected from among following surface characteristics: (a1) the wavelength of the undulation is ≤5 μm, (b1) the wavelength of the undulation is ≥120 mm and (c1) the wavelength of the undulation is ≥5 μm and