SEMICONDUCTOR CIRCUIT

SEMICONDUCTOR CIRCUIT

PROBLEM TO BE SOLVED: To provide a semiconductor circuit which is composed of a MOS-FET that can achieve both of a high speed switching characteristic and small threshold current characteristic. SOLUTION: The semiconductor, which has a logic circuit 1 composed of MOS-FET Q1, Q2, includes voltage sup...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ARIMOTO KAZUTAMI, TSUKIDE MASAKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor circuit which is composed of a MOS-FET that can achieve both of a high speed switching characteristic and small threshold current characteristic. SOLUTION: The semiconductor, which has a logic circuit 1 composed of MOS-FET Q1, Q2, includes voltage supply means 15, 13 which supply voltages Vpp, Vbbdifferent from back gate bias voltages Vcc, Vssof MOS-FET Q1, Q2 and a switching means 10 which switches a back gate bias voltage of the MOS-FET Q1, Q2 to the voltages Vcc, Vssand the voltages Vpp, Vbbdifferent to the voltages Vcc, Vss. COPYRIGHT: (C)2009,JPO&INPIT