SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To form a manganese oxide layer as a barrier layer on a bottom part of a contact hole in forming a copper contact by using copper-manganese alloy technique. SOLUTION: The semiconductor device 100 comprises a metal containing compound layer 102 formed on a semiconductor substrat...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: HINOMURA TORU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator HINOMURA TORU
description PROBLEM TO BE SOLVED: To form a manganese oxide layer as a barrier layer on a bottom part of a contact hole in forming a copper contact by using copper-manganese alloy technique. SOLUTION: The semiconductor device 100 comprises a metal containing compound layer 102 formed on a semiconductor substrate 101, an insulator film 103 formed on the semiconductor substrate 101 also on the metal containing compound layer 102, the contact hole 104 formed on the insulator film 103 so as to reach the metal containing compound layer 102, a contact plug formed on the contact hole 104, and the manganese oxide layer 119 formed respectively between the insulator film 103 and the contact plug and between the metal containing compound layer 102 and the contact plug. COPYRIGHT: (C)2009,JPO&INPIT
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2009164403A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2009164403A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2009164403A3</originalsourceid><addsrcrecordid>eNrjZDAMdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8AwJVvB19At1c3QOCQ3y9HNX8HUN8fB34WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgYGloZmJiYGxo7GRCkCAKjsJw0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD</title><source>esp@cenet</source><creator>HINOMURA TORU</creator><creatorcontrib>HINOMURA TORU</creatorcontrib><description>PROBLEM TO BE SOLVED: To form a manganese oxide layer as a barrier layer on a bottom part of a contact hole in forming a copper contact by using copper-manganese alloy technique. SOLUTION: The semiconductor device 100 comprises a metal containing compound layer 102 formed on a semiconductor substrate 101, an insulator film 103 formed on the semiconductor substrate 101 also on the metal containing compound layer 102, the contact hole 104 formed on the insulator film 103 so as to reach the metal containing compound layer 102, a contact plug formed on the contact hole 104, and the manganese oxide layer 119 formed respectively between the insulator film 103 and the contact plug and between the metal containing compound layer 102 and the contact plug. COPYRIGHT: (C)2009,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090723&amp;DB=EPODOC&amp;CC=JP&amp;NR=2009164403A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090723&amp;DB=EPODOC&amp;CC=JP&amp;NR=2009164403A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HINOMURA TORU</creatorcontrib><title>SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD</title><description>PROBLEM TO BE SOLVED: To form a manganese oxide layer as a barrier layer on a bottom part of a contact hole in forming a copper contact by using copper-manganese alloy technique. SOLUTION: The semiconductor device 100 comprises a metal containing compound layer 102 formed on a semiconductor substrate 101, an insulator film 103 formed on the semiconductor substrate 101 also on the metal containing compound layer 102, the contact hole 104 formed on the insulator film 103 so as to reach the metal containing compound layer 102, a contact plug formed on the contact hole 104, and the manganese oxide layer 119 formed respectively between the insulator film 103 and the contact plug and between the metal containing compound layer 102 and the contact plug. COPYRIGHT: (C)2009,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAMdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8AwJVvB19At1c3QOCQ3y9HNX8HUN8fB34WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgYGloZmJiYGxo7GRCkCAKjsJw0</recordid><startdate>20090723</startdate><enddate>20090723</enddate><creator>HINOMURA TORU</creator><scope>EVB</scope></search><sort><creationdate>20090723</creationdate><title>SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD</title><author>HINOMURA TORU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2009164403A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HINOMURA TORU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HINOMURA TORU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD</title><date>2009-07-23</date><risdate>2009</risdate><abstract>PROBLEM TO BE SOLVED: To form a manganese oxide layer as a barrier layer on a bottom part of a contact hole in forming a copper contact by using copper-manganese alloy technique. SOLUTION: The semiconductor device 100 comprises a metal containing compound layer 102 formed on a semiconductor substrate 101, an insulator film 103 formed on the semiconductor substrate 101 also on the metal containing compound layer 102, the contact hole 104 formed on the insulator film 103 so as to reach the metal containing compound layer 102, a contact plug formed on the contact hole 104, and the manganese oxide layer 119 formed respectively between the insulator film 103 and the contact plug and between the metal containing compound layer 102 and the contact plug. COPYRIGHT: (C)2009,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2009164403A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T22%3A16%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HINOMURA%20TORU&rft.date=2009-07-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2009164403A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true