SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To form a manganese oxide layer as a barrier layer on a bottom part of a contact hole in forming a copper contact by using copper-manganese alloy technique. SOLUTION: The semiconductor device 100 comprises a metal containing compound layer 102 formed on a semiconductor substrate 101, an insulator film 103 formed on the semiconductor substrate 101 also on the metal containing compound layer 102, the contact hole 104 formed on the insulator film 103 so as to reach the metal containing compound layer 102, a contact plug formed on the contact hole 104, and the manganese oxide layer 119 formed respectively between the insulator film 103 and the contact plug and between the metal containing compound layer 102 and the contact plug. COPYRIGHT: (C)2009,JPO&INPIT