MAGNETIC MEMORY AND METHOD FOR WRITING THE SAME

MAGNETIC MEMORY AND METHOD FOR WRITING THE SAME

PROBLEM TO BE SOLVED: To provide a magnetic random access memory realized by application of inverted spin torque magnetization with a small write current value. SOLUTION: The magnetic memory includes a switching element 6 controlled in its conductivity by a gate electrode 5 and three magnetoresistiv...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: ITOU AKITOMO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator ITOU AKITOMO
description PROBLEM TO BE SOLVED: To provide a magnetic random access memory realized by application of inverted spin torque magnetization with a small write current value. SOLUTION: The magnetic memory includes a switching element 6 controlled in its conductivity by a gate electrode 5 and three magnetoresistive elements 44, 48, 52 connected thereto in series. Each magnetoresistive element is formed as a TMR element or a GMR element having a multilayer film formed of a fixed layer, a non-magnetic layer, and a free layer and the center element is formed as the memory element. In the magnetoresistive element produced, an absolute value of the current required for changing a magnetizing direction of at least one element among the magnetoresistive elements provided in both sides becomes larger than the absolute value of the current required for changing the magnetizing direction of the center magnetoresistive element 48. COPYRIGHT: (C)2009,JPO&INPIT
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2009158665A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2009158665A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2009158665A3</originalsourceid><addsrcrecordid>eNrjZND3dXT3cw3xdFbwdfX1D4pUcPRzATJDPPxdFNz8gxTCgzxDPP3cFUI8XBWCHX1deRhY0xJzilN5oTQ3g5Kba4izh25qQX58anFBYnJqXmpJvFeAkYGBpaGphZmZqaMxUYoAOVsmRQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MAGNETIC MEMORY AND METHOD FOR WRITING THE SAME</title><source>esp@cenet</source><creator>ITOU AKITOMO</creator><creatorcontrib>ITOU AKITOMO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a magnetic random access memory realized by application of inverted spin torque magnetization with a small write current value. SOLUTION: The magnetic memory includes a switching element 6 controlled in its conductivity by a gate electrode 5 and three magnetoresistive elements 44, 48, 52 connected thereto in series. Each magnetoresistive element is formed as a TMR element or a GMR element having a multilayer film formed of a fixed layer, a non-magnetic layer, and a free layer and the center element is formed as the memory element. In the magnetoresistive element produced, an absolute value of the current required for changing a magnetizing direction of at least one element among the magnetoresistive elements provided in both sides becomes larger than the absolute value of the current required for changing the magnetizing direction of the center magnetoresistive element 48. COPYRIGHT: (C)2009,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090716&amp;DB=EPODOC&amp;CC=JP&amp;NR=2009158665A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090716&amp;DB=EPODOC&amp;CC=JP&amp;NR=2009158665A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ITOU AKITOMO</creatorcontrib><title>MAGNETIC MEMORY AND METHOD FOR WRITING THE SAME</title><description>PROBLEM TO BE SOLVED: To provide a magnetic random access memory realized by application of inverted spin torque magnetization with a small write current value. SOLUTION: The magnetic memory includes a switching element 6 controlled in its conductivity by a gate electrode 5 and three magnetoresistive elements 44, 48, 52 connected thereto in series. Each magnetoresistive element is formed as a TMR element or a GMR element having a multilayer film formed of a fixed layer, a non-magnetic layer, and a free layer and the center element is formed as the memory element. In the magnetoresistive element produced, an absolute value of the current required for changing a magnetizing direction of at least one element among the magnetoresistive elements provided in both sides becomes larger than the absolute value of the current required for changing the magnetizing direction of the center magnetoresistive element 48. COPYRIGHT: (C)2009,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND3dXT3cw3xdFbwdfX1D4pUcPRzATJDPPxdFNz8gxTCgzxDPP3cFUI8XBWCHX1deRhY0xJzilN5oTQ3g5Kba4izh25qQX58anFBYnJqXmpJvFeAkYGBpaGphZmZqaMxUYoAOVsmRQ</recordid><startdate>20090716</startdate><enddate>20090716</enddate><creator>ITOU AKITOMO</creator><scope>EVB</scope></search><sort><creationdate>20090716</creationdate><title>MAGNETIC MEMORY AND METHOD FOR WRITING THE SAME</title><author>ITOU AKITOMO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2009158665A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>ITOU AKITOMO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ITOU AKITOMO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MAGNETIC MEMORY AND METHOD FOR WRITING THE SAME</title><date>2009-07-16</date><risdate>2009</risdate><abstract>PROBLEM TO BE SOLVED: To provide a magnetic random access memory realized by application of inverted spin torque magnetization with a small write current value. SOLUTION: The magnetic memory includes a switching element 6 controlled in its conductivity by a gate electrode 5 and three magnetoresistive elements 44, 48, 52 connected thereto in series. Each magnetoresistive element is formed as a TMR element or a GMR element having a multilayer film formed of a fixed layer, a non-magnetic layer, and a free layer and the center element is formed as the memory element. In the magnetoresistive element produced, an absolute value of the current required for changing a magnetizing direction of at least one element among the magnetoresistive elements provided in both sides becomes larger than the absolute value of the current required for changing the magnetizing direction of the center magnetoresistive element 48. COPYRIGHT: (C)2009,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2009158665A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
title MAGNETIC MEMORY AND METHOD FOR WRITING THE SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T06%3A54%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ITOU%20AKITOMO&rft.date=2009-07-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2009158665A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true