MAGNETIC MEMORY AND METHOD FOR WRITING THE SAME

PROBLEM TO BE SOLVED: To provide a magnetic random access memory realized by application of inverted spin torque magnetization with a small write current value. SOLUTION: The magnetic memory includes a switching element 6 controlled in its conductivity by a gate electrode 5 and three magnetoresistive elements 44, 48, 52 connected thereto in series. Each magnetoresistive element is formed as a TMR element or a GMR element having a multilayer film formed of a fixed layer, a non-magnetic layer, and a free layer and the center element is formed as the memory element. In the magnetoresistive element produced, an absolute value of the current required for changing a magnetizing direction of at least one element among the magnetoresistive elements provided in both sides becomes larger than the absolute value of the current required for changing the magnetizing direction of the center magnetoresistive element 48. COPYRIGHT: (C)2009,JPO&INPIT