HETERO-JUNCTION FIELD EFFECT TRANSISTOR AND METHOD OF PRODUCING THE SAME

PROBLEM TO BE SOLVED: To prevent increase in parasitic resistance by lowering potential barrier in the lower side of source/drain electrodes. SOLUTION: The hetero-junction field effect transistor (FET) is formed of a nitride semiconductor provided with including a channel layer 30 and a barrier laye...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OISHI TOSHIYUKI, FUKITA MUNEYOSHI, ABE YUJI, NANJO TAKUMA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!