CIRCUIT SIMULATION METHOD FOR HIGH-WITHSTAND-VOLTAGE MOS TRANSISTOR

PROBLEM TO BE SOLVED: To achieve a model as a bidirectional MOS, and to improve simulation accuracy of high-withstand-voltage MOS. SOLUTION: Disclosed is a method in which a simulation is performed using a macro model for carrying out a simulation of a high-withstand-voltage MOSFET. The macro model...

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1. Verfasser:	SAITO FUMITOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEMICONDUCTOR DEVICES
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Zusammenfassung:	PROBLEM TO BE SOLVED: To achieve a model as a bidirectional MOS, and to improve simulation accuracy of high-withstand-voltage MOS. SOLUTION: Disclosed is a method in which a simulation is performed using a macro model for carrying out a simulation of a high-withstand-voltage MOSFET. The macro model is obtained by adding first and second JFETs(JN1 and JN2) to drain and source sides, respectively, of an NMOSFET; connecting one end of a first diode (D1) to a gate of the first JFET (J1) and connecting the other end of the first diode (D1) to the source of the NMOSFET; and connecting one end of a second diode (D2) to a gate of the second JFET (J2) and connecting the other end of the second diode (D2) to the drain of the MOSFET. COPYRIGHT: (C)2009,JPO&INPIT