SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, capable of suppressing variations in the drive forces of MOS transistors even when a liner film for giving strain to a channel is formed. SOLUTION: In order to cover gate structures 5 and 6, a lower layer insulating film 10 is formed on a semiconductor substrate 1. Thereafter, the liner film 11 consisting of silicon nitride is formed on the lower layer insulating film 10. Then, a stress change process for changing the stress of the liner film 11 is executed. Also, coverage that the lower layer insulating film 10 has when forming the film is higher (better) than coverage that the liner film 11 has when forming the film. COPYRIGHT: (C)2009,JPO&INPIT