SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To prevent the occurrence of short circuit between a first p-type region and a second p-type region, even if a first n-type region and the first p-type region are laminated and formed on the second p-type region in a semiconductor device with a thyristor structure. SOLUTION: In the semiconductor device 1, a thyristor T1 in which a p-type first p-type region p1 (a first region), an n-type first n-type region n1 (a second region), a p-type second p-type region p2 (a third region), and an n-type second n-type region n2 (a fourth region) are sequentially connected is isolated by an element isolation region 13. The second p-type region p2 is formed on a semiconductor substrate 11 isolated by the element isolation region 13. The first n-type region n1 is formed on a portion of the second p-type region p2. One end of an interface between the first n-type region n1 and the second p-type region p2 is connected to a sidewall of the element isolation region 11. COPYRIGHT: (C)2009,JPO&INPIT