PHOTOELECTRIC CONVERSION ELEMENT AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a manufacturing method for obtaining a photoelectric conversion element having excellent characteristics. SOLUTION: This manufacturing method of the photoelectric conversion element includes (a) a process to form an n-type semiconductor layer on the surface of a p-type crystal silicon substrate, (b) a process to apply surface treatment to the surface of the n-type semiconductor layer by plasma formed by using a mixed gas containing hydrogen gas and ammonia gas, (c) a process to form a silicon nitride film on the n-type semiconductor layer, (d) a process to form a back electrode on the back of the p-type crystal silicon substrate, and (e) a process to form a light-receiving surface electrode on the nitride silicon film. COPYRIGHT: (C)2009,JPO&INPIT