MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method of an excellent nitride semiconductor device, which does not generate a warp on a silicon substrate or a crack in a nitride semiconductor layer even when a thick nitride semiconductor layer is epitaxially grown on the silicon substrate. SOLUTION: On the silicon substrate 10, an aluminum nitride layer 11 is grown. A part of the aluminum nitride layer 11 is removed and a plurality of respectively sectioned small areas are formed. Trimethyl gallium and ammonia gas are used as growth gas and a gallium nitride layer 13 is grown. By the reaction of silicon and the trimethyl gallium, meltback etching occurs and the gallium nitride layer 13 is selectively grown on the small areas. COPYRIGHT: (C)2009,JPO&INPIT