METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon single crystal where stable operation can be performed by preventing the occurrence of dislocation at the tail part of the silicon single crystal even when the manufacturing time of the silicon single crystal becomes long and a quartz crucible is easily deteriorated. SOLUTION: In the forming of the tail part which is the end of the pulling up and growing of the silicon single crystal, the residual amount Y of a silicon molten liquid is a specified amount or more until the used time of the quartz crucible, which is an integrated time from the formation of the silicon molten liquid, reaches a specified time p not relating to the used time. After reaching the specified time p, a required residual amount Y is increased with the used time of the quartz crucible and satisfies the equation denoted as Y≥aX+b-ap and then the occurrence of the dislocation in the formation of the tail part of the silicon single crystal can be stably prevented. COPYRIGHT: (C)2009,JPO&INPIT