METHOD FOR FORMING FILM OF ORGANIC SEMICONDUCTOR LAYER, METHOD FOR MANUFACTURING ORGANIC THIN-FILM TRANSISTOR

PROBLEM TO BE SOLVED: To provide a method for forming films for an organic semiconductor layer of large crystal size in a simple process, and to provide a method for manufacturing an organic thin-film transistor. SOLUTION: The film forming method for the organic semiconductor layer comprises: a step...

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Hauptverfasser: YAMADA JUN, HIRAO TAKEYA
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for forming films for an organic semiconductor layer of large crystal size in a simple process, and to provide a method for manufacturing an organic thin-film transistor. SOLUTION: The film forming method for the organic semiconductor layer comprises: a step of applying organic semiconductor solution, which has been produced by dissolving or distributing organic semiconductor material containing silyl ethynil pentancenses in solvent, to the top of a substrate according to a desired pattern; and a step of forming a crystal thin film of the organic semiconductor material by evaporating solvent contained in the organic semiconductor solution applied according to the pattern. And, the film forming method for the organic semiconductor layer is implemented in the above order, and its main feature is that ≥3 wt.% of the organic semiconductor material is dissolved in solvent having a boiling point of ≥173°C. COPYRIGHT: (C)2009,JPO&INPIT