PATTERN FORMING METHOD

PROBLEM TO BE SOLVED: To provide a pattern forming method capable of performing a good patterning which utilizes EUV light. SOLUTION: The pattern forming method includes the steps of: forming a first film on a substrate to be treated; forming a second film consisting of a silicon film on the first f...

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Bibliographische Detailangaben
Hauptverfasser:	MITSUYOSHI YASURO, SHIOBARA HIDESHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a pattern forming method capable of performing a good patterning which utilizes EUV light. SOLUTION: The pattern forming method includes the steps of: forming a first film on a substrate to be treated; forming a second film consisting of a silicon film on the first film, which has an optical absorption factor to the EUV (Extreme Ultraviolet) light smaller than that of the first film; forming a resist film on the second film; selectively irradiating the EUV light to the resist film; and developing the resist film. COPYRIGHT: (C)2009,JPO&INPIT