METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS

PROBLEM TO BE SOLVED: To form a line-and-space pattern having a fine pitch smaller than the resolution limit of exposure technology. SOLUTION: A method of manufacturing a semiconductor apparatus includes: laminating a first film 16 on a film to be processed 15 laminated on a semiconductor substrate 1; processing the first film 16 using a patterned resist 17 as a mask; laminating a second film 20 on the processed first film 16; laminating a third film 21 after leaving the second film 20 only on a sidewall of the first film 16; removing the first film 16 after removing the third film 21 until the first film 16 is exposed; laminating a fourth film 22; laminating a fifth film 23 after removing the fourth film 33 with leaving the fourth film 33 only on a sidewall of the second film 20; removing the third film 21 and the fourth film 22 after processing the fifth film 23, the third film 21 and the fourth film 22 so as to have a predetermined thickness; and processing the film to be processed using the second film 20 and the fifth film 23 as a mask. COPYRIGHT: (C)2009,JPO&INPIT