MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method suppressing the dispersion of a resistance value generated in a resistance element by a heat treatment. SOLUTION: A manufacturing method for a semiconductor device contains a process forming a trench section in a capacity-element region, the process forming a capacitor insulating film to a wall surface and a base on the trench section side and the process depositing an undoped silicon film so as to fill the trench section and coat a resistance-element region on a semiconductor substrate. The manufacturing method further contains the process selectively implanting the ions of a first impurity element in the silicon film in the capacity-element region and the process patterning the silicon film and forming an upper-electrode pattern and a resistance pattern for the capacity element. The manufacturing method further contains the process diffusing the first impurity element in the silicon upper-electrode pattern by the heat treatment and the process selectively implanting the ions of an impurity element into the silicon resistance pattern in the resistance-element region. The manufacturing method further contains the process forming a gate insulating film and a semiconductor element having a gate-electrode pattern on the gate insulating film in a logic-element region on the semiconductor substrate. COPYRIGHT: (C)2009,JPO&INPIT