BACKSIDE IRRADIATION-TYPE IMAGING DEVICE

PROBLEM TO BE SOLVED: To provide a backside irradiation-type imaging device capable of preventing the occurrence of mixed colors caused by incident light, in an oblique direction. SOLUTION: The backside irradiation-type imaging device reads charge generated from the inside of a semiconductor substrate according to light from the front side of the semiconductor substrate for imaging by applying light from the back side of the semiconductor substrate. The backside irradiation-type imaging device has a photoelectric conversion region including a plurality of impurity diffusion layers laminated so that potential becomes lower from the rear side to the front side in the semiconductor substrate; and a charge-accumulating region for accumulating signal charges generated by the photoelectric conversion region. A plurality of pixels are formed, where the pixels have the photoelectric conversion region, the charge-accumulating region, and a read means for reading the signal charges accumulated in the charge-accumulating region. An embedded member 18 constituted of a light-reflecting material and extending from the rear side to the front side of the semiconductor substrate is formed at the photoelectric conversion region among the adjacent pixels themselves. COPYRIGHT: (C)2009,JPO&INPIT